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| Ordering number : ENA1076 2SC4853A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Features * Low-Voltage, Low-Current High-Frequency Amplifier Applications Low-voltage, low-current operation : fT=5GHz typ. (VCE=1V, IC=1mA) :S21e2=7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 12 6 1.5 15 90 150 --55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE VCB=5V, IE=0A VEB=1V, IC=0A VCE=1V, IC=1mA 60* Conditions Ratings min typ max 1.0 10 270* Unit A A * : The 2SC4853A is classified by 1mA hFE as follows : Marking Rank hFE CN3 3 60 to 120 CN4 4 90 to 180 CN5 5 135 to 270 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. www.semiconductor-sanyo.com/network D2408AB MS IM TC-00001797 No. A1076-1/5 2SC4853A Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Forward Transfer Gain Noise Figure Symbol fT Cob 2 S21e 1 S21e22 Conditions VCE=1V, IC=1mA VCB=1V, f=1MHz VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz VCE=1V, IC=1mA, f=1GHz VCE=2V, IC=3mA, f=1GHz Ratings min typ 5 0.6 4.5 7 10.5 2.6 1.9 4.5 1.0 max Unit GHz pF dB dB dB dB NF1 NF2 Package Dimensions unit : mm (typ) 7023-009 0.425 3 1.25 2.1 0 to 0.1 0.425 1 2 0.65 0.65 2.0 0.3 0.9 0.6 1 : Base 2 : Emitter 3 : Collector SANYO : MCP 20 18 IC -- VCE 0.2 0.3 0.15 1000 7 5 hFE -- IC Collector Current, IC -- mA 16 14 12 10 8 6 4 2 0 0 1 2 105A 90A 75A 60A DC Current Gain, hFE 150A 120A 135A 3 2 100 7 5 3 2 10 0.1 VCE=2V 1V 45A 30A 15A IB=0A 3 4 5 6 IT14232 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 2 Collector Current, IC -- mA 2 IT14233 fT -- IC Cob -- VCB f=1MHz Gain-Bandwidth Product, fT -- GHz Output Capacitance, Cob -- pF 10 7 1.0 7 5 VC 5 3 =2 E V 1V 2 3 2 1.0 7 5 3 2 0.1 7 3 5 7 1.0 2 3 5 7 Collector Current, IC -- mA 2 10 ITR07582 5 5 7 0.1 2 3 5 7 1.0 2 3 5 Collector-to-Base Voltage, VCB -- V 7 10 2 ITR07583 No. A1076-2/5 2SC4853A 10 NF -- IC f=1GHz 14 S21e2 -- IC f=1GHz Forward Transfer Gain,S21e2 -- dB 12 8 Noise Figure, NF -- dB 10 VC =2 E V 1V 6 8 4 6 V CE =1 V 4 2 2V 2 0 0 2 3 5 7 1.0 2 3 5 7 10 2 ITR07585 100 90 2 3 5 7 1.0 2 3 5 7 14 Collector Current, IC -- mA S21e2, NF -- V Collector Current, IC -- mA ITR07584 CE f=1GHz PC -- Ta Collector Dissipation, PC -- mW 6 7 12 IC=3mA 2 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 S21e2, NF -- dB 10 S21e 8 1mA 6 4 NF 2 IC=1mA 3mA 0 0 1 2 3 4 5 Collector-to-Emitter Voltage, VCE -- V ITR07586 Ambient Temperature, Ta -- C IT14234 No. A1076-3/5 2SC4853A S Parameters S11e f=200MHz to 2000MHz(200MHz Step) j50 j25 j100 j150 j10 j200 j250 150 G 0.2 S21e f=200MHz to 2000MHz(200MHz Step) 90 120 60 Hz VCE=2V IC=3mA V =1 V CE 1mA I C= z H 2G 0. 30 0 10 25 50 100 150 250 180 2.0 GH 2 z 4 6 8 0 2.0GH z --j10 VCE=2V IC=3mA V C IC = E =1V 1m A 0.2GHz --j250 --j200 --j150 --150 --30 --j25 --j50 --j100 --120 ITR07588 --60 --90 ITR07589 S12e f=200MHz to 2000MHz(200MHz Step) 90 120 V =1 V CE 1mA = IC S22e f=200MHz to 2000MHz(200MHz Step) j50 60 j25 2.0 GH z j100 j150 150 30 j10 V =2 A CE=3m V IC 0 j200 j250 0. 2G Hz 180 0.05 0.10 0.15 0.20 0 0.2 0.5 10 20 100 Hz --150 --30 2.0G --j10 VCE=2V IC=3mA G 0.2 Hz --j25 --120 --90 --60 ITR07590 VCE=1V IC=1mA --j100 --j250 --j200 --j150 --j50 ITR07591 No. A1076-4/5 2SC4853A S Parameters (Common emitter) VCE=1V, IC=1mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.940 0.863 0.778 0.698 0.608 0.546 0.470 0.418 0.388 0.354 S11 --17.9 --33.7 --48.0 --60.5 --73.5 --84.7 --96.2 --106.4 --117.3 --127.0 S21 3.228 2.983 2.732 2.469 2.320 2.106 1.977 1.826 1.700 1.615 S21 159.6 143.7 129.9 117.7 106.2 96.3 87.1 78.8 72.2 65.9 S12 0.058 0.107 0.145 0.173 0.195 0.210 0.129 0.224 0.230 0.234 S12 77.1 66.6 58.1 50.9 45.4 40.9 37.6 35.3 33.8 32.9 S22 0.972 0.914 0.844 0.773 0.717 0.668 0.624 0.590 0.562 0.546 S22 --12.2 --22.7 --31.7 --39.6 --46.0 --51.7 --56.5 --60.6 --64.3 --67.5 VCE=2V, IC=3mA, ZO=50 Freq(MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.839 0.672 0.536 0.431 0.360 0.310 0.265 0.242 0.228 0.217 S11 --30.6 --53.7 --71.7 --85.7 --99.0 --111.4 --122.6 --134.7 --148.0 --157.2 S21 7.428 6.016 4.908 4.073 3.494 3.033 2.694 2.422 2.205 2.061 S21 149.3 128.5 113.6 101.9 92.7 84.4 77.4 70.9 65.9 60.8 S12 0.050 0.083 0.105 0.121 0.135 0.150 0.162 0.175 0.189 0.205 S12 71.4 60.6 55.1 52.5 51.4 50.9 50.9 51.0 51.1 51.0 S22 0.916 0.778 0.672 0.597 0.548 0.514 0.492 0.475 0.461 0.456 S22 --18.3 --30.2 --37.1 --41.9 --45.7 --49.2 --52.3 --55.6 --59.0 --61.8 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2008. Specifications and information herein are subject to change without notice. PS No. A1076-5/5 |
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